Photoluminescence Imaging Diagnosis of Particulate Iron Contamination Derived From HF Dip and Thermal Oxidation

Baker-Finch, SimeonMcIntosh, Keith2015-12-102156-3381http://hdl.handle.net/1885/64064Photoluminescence (PL) imaging identifies contamination occurring in thermal oxidation of p-type crystalline silicon. PL images indicate that the contamination decreases the carrier lifetime from ∼350 to 50 μs and that it is radially symmetric with a dKeywords: Crystalline silicons; Cylindrical coordinates; Iron contamination; Lateral Flow; Out-diffusion; P-type; Photoluminescence imaging; PL image; Radially symmetric; Semiconductor equations; Thermal oxidation; Charge carriers; Cleaning; Contamination; Impuriti Charge carriers; cleaning; contamination; photoluminescence imaging; siliconPhotoluminescence Imaging Diagnosis of Particulate Iron Contamination Derived From HF Dip and Thermal Oxidation201110.1109/JPHOTOV.2011.21656992016-02-24