Saxena, DhruvMokkapati, SudhaJagadish, ChennupatiTan, Hark Hoe2015-12-10December 19781467330459http://hdl.handle.net/1885/60387Design parameters for a single GaAs nanowire laser are determined by calculating the threshold gain for nanowire guided modes as a function of nanowire diameter and length. The material gain as a function of carrier density is modelled using theoretical microscopic gain model. The laser power required to optically pump these nanowires to reach threshold gain is also determined. These calculations provide guidance to grow the optimal structures that can lase at low threshold at room temperature (RT).Keywords: Design parameters; Gaas nanowires; Low thresholds; Material gain; Optimal structures; Provide guidances; Room temperature; Threshold gain; Gallium arsenide; Microelectronics; Semiconducting gallium; Structural optimization; Nanowires201210.1109/COMMAD.2012.64723802016-02-24