Orbons, SSpooner, M GElliman, Robert2015-12-132015-12-130021-8979http://hdl.handle.net/1885/77521Commercially prepared (100) oriented silicon wafers were oxidized to produce SiO2 layers of 5 μm, 970 nm, 650 nm and 103 nm. Each sample was annealed at 1050°C for 1 h in a forming gas ambient. The photoluminescence (PL) emission was collected with f4 oKeywords: Annealing; Light reflection; Nanostructured materials; Nitrogen; Oxidation; Photoluminescence; Silica; Spectrometers; Spectrum analysis; Synthesis (chemical); Detection system; Incident angle; Oxide layers; Room temperature; Silicon wafers200410.1063/1.17900582016-02-24