Mokkapati, SudhaJagadish, ChennupatiMcBean, K. E.Phillips, Matthew R.Tan, Hark Hoe2015-12-07July 3-7 21424404533http://hdl.handle.net/1885/26520The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.Keywords: Crystal growth; Epitaxial growth; Indium arsenide; Molecular beam epitaxy; Nanoscience; Nanotechnology; Optical waveguides; Quantum electronics; Semiconducting indium; Silicon compounds; International conferences; Nanoscience and nanotechnology (NST); Pre Integrated optoelectronic devices; Quantum dots; Selective area epitaxy200610.1109/ICONN.2006.3406482015-12-07