Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment

Kucheyev, SergeiWilliams, JamesJagadish, ChennupatiZou, JinLi, Gang2015-12-130021-8979http://hdl.handle.net/1885/89280The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion implantation are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Amorphous layers annealed in vacuum at 500°Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment20002015-12-12