Fink, DietmarSzimkowiak, PHu, Xiao-ZhiHo, JoshuaVacik, JChadderton, Lewis2015-12-131042-0150http://hdl.handle.net/1885/89800Silicon wafers were implanted with 200 keV B+ ions up to 5 × 1014 cm-2 fluence, then postirradiated with 75-650 keV Ne+ ions at different fluences up to a near-constant damage level, and finally furnace annealed up to 500°C. The change in the boron deptKeywords: Boron; Computer simulation; Furnace annealing; Implantation; Intersticialcy mechanism; Neon; Neutron depth profiling; Radiation enhanced diffusion; Range distributions; Silicon; Surface precipitation20002015-12-12