Wang, WenjieHe, JianCai, LunWang, ZileiKaruturi, Siva KrishnaGao, PingqiShen, Wenzhong2023-05-042367-198Xhttp://hdl.handle.net/1885/289854Crystalline silicon (c-Si) solar cells with carrier-selective passivating contacts have been prosperously developed over the past few years, showing fundamental advantages, e.g., simpler configurations and higher potential efficiencies, compared with conventional c-Si solar cells using highly doped emitters. Herein, solution-processed cesium halides (CsX, X represents F, Cl, Br, I) are investigated as electron-selective contacts for c-Si solar cells, enabling lowest contact resistivity down to about 1 mΩ cm2 for slightly doped n-type c-Si/CsF/Al contact. After inserting a thin intrinsic amorphous silicon (a-Si:H(i)) passivating layer, the contact resistivity can still be kept in a low value, about 10 mΩ cm2. With full area rear-side a-Si:H(i)/CsF/Al electron-selective passivating contacts, record power conversion efficiencies of about 21.8% are finally demonstrated for n-type c-Si solar cells, showing a simple approach to realize high-efficiency c-Si solar cells.W.S. acknowledges the support from Major State Basic Research Development Program of China (2018YFB1500501), National Natural Science Foundation of China (11834011, 11974242). J.H. and S.K.K.acknowledge the financial support from the Australian Renewable Energy Agency (ARENA). P.G. acknowledges the support from National Natural Science Foundation of China (61974169, 61674154), Guangdong Basic and Applied Basic Research Foundation (2019B151502053).application/pdfen-AU© 2020 Wiley-VCH GmbH202010.1002/solr.2020005692022-02-13