Chen, HongjunLyu, MiaoqiangZhang, MengFeron, KrishnaSearles, Debra J.Dargusch, MatthewYao, XiangdongWang, Lianzhou2021-09-221864-5631http://hdl.handle.net/1885/248325A new type of SnS2 nanoplate photoelectrode is prepared by using a mild wet-chemical method. Depending on the calcination temperatures, SnS2-based photoelectrodes can either retain their n-type nature with greatly enhanced anodic photocurrent density (ca. 1.2 mA cm−2 at 0.8 V vs. Ag/AgCl) or be completely converted into p-type SnS to generate approximately 0.26 mA cm−2 cathodic photocurrent density at −0.8 V vs. Ag/AgCl. The dominance of sulfur and tin vacancies are found to account for the dramatically different photoelectrochemical behaviors of n-type SnS2 and p-type SnS photoelectrodes. In addition, the band structures of n-type SnS2 and p-type SnS photoelectrodes are also deduced, which may provide an effective strategy for developing SnS2/SnS films with controllable energy-band levels through a simple calcination treatment.The Australian Research Council is acknowledged for its financial support through its Discovery, Linkage, and Future Fellowship projects, and Dr. H. J. Chen thanks the University of Queensland for the UQ Postdoctoral Fellowship grant support.application/pdfen-AU© 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheimcalcinationnanostructuresphotoelectrochemistrysemiconductorstin201710.1002/cssc.2016016032020-11-23