Elliman, R. G.Hogg, S. M.Kringhoj, P.2026-01-012026-01-01078034538X9780780345386ORCID:/0000-0002-1304-4219/work/167651025https://hdl.handle.net/1885/733801511Time-resolved reflectivity (TRR) and secondary-ion mass-spectrometry (SIMS) are used to study the solid-phase-epitaxial-crystallization (SPEC) of amorphous Si layers containing a B delta-doped superlattice. The superlattice consists of three narrow B profiles (10 nm FWHM) separated by approximately 170 nm, each with a peak concentration of 1.3×10 20 B.cm -3. The SPEC velocity is shown to increase to a rate approximately three times that of intrinsic Si as the crystalline-amorphous interface passes through each B profile, the velocity enhancement closely following the B distribution. Diffusive broadening of the B profiles is also observed during SPEC. This is used to estimate the diffusivity of B in amorphous Si, which was found to be 2.6±0.5×10 -16 cm 2/s at 600 °C.4en19990033348478