Barik, S.Jagadish, C.Tan, Hark Hoe2015-10-062015-10-060003-6951http://hdl.handle.net/1885/15775Protonimplantation-induced intermixing of InAsquantum dots(QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900°C for 30s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800°C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V interdiffusion whereas the QDsgrown on and capped with GaInAsP layers show the least implantation-induced energy shift due to weak group V and group III interdiffusion. The QDs capped with InP and InGaAs layers show intermediate implantation-induced energy shift and are less thermally stable compared to the QDsgrown on and capped with GaInAsP layers. The QDs capped with InP layers show enhanced photoluminescence(PL) intensity when implanted with lower proton dose (less than 5×10¹⁴ions/cm²). On the other hand higher proton dose (more than 1×10¹⁴ions/cm²) reduces the PL linewidth in all samples.The authors gratefully acknowledge financial support from the Australian Research Council.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 6/10/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2208371Keywords: Annealing; Indium compounds; Ion implantation; Metallorganic chemical vapor deposition; Photoluminescence; Protons; Thermodynamic stability; GaInAsP; Implantation-induced energy shift.; Interdiffusion; Optimum annealing temperature; Semiconductor quantum2006-05-3010.1063/1.22083712015-12-12