Dogra, RByrne, AidanBrett, David AlisdairRidgway, Mark C2015-12-102015-12-100304-3843http://hdl.handle.net/1885/39939Using 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.Keywords: Defects; Electric field gradient; Palladium; Perturbed angular correlation; Silicon200710.1007/s10751-008-9618-82015-12-09