Waddington, D. E. J.Burke, AnthonyFricke, SJagadish, ChennupatiHamilton, Alexander RudolfTrunov, KReuter, DWieck, Andreas DirkMicolich, Adam PaulTan, Hark Hoe2015-12-13December 19781424473335http://hdl.handle.net/1885/83589We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results ofKeywords: AlGaAs/GaAs; Comparative studies; Device stability; Easy fabrication; Heterostructures; Insulated gate; Modulation-doped; Quantum device; Thin oxide layers; Atomic layer deposition; Heterojunctions; Lead oxide; Microelectronics; Quantum theory; Equipment201010.1109/COMMAD.2010.56997382016-02-24