Deenapanray, P.N.KNyamhere, CloudAuret, F.D2005-07-212006-03-272011-01-052006-03-272011-01-0520053936338191http://hdl.handle.net/1885/43100http://digitalcollections.anu.edu.au/handle/1885/43100We have measured the electrical and annealing properties of defects created in Czochralski grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace(L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.93460 bytes353 bytesapplication/pdfapplication/octet-streamen-AUCzochralskiSiLaplace DLTSGallium dopingdefect introduction rates20052015-12-12