Lee, Yu-Heng (Jaret)Li, ZheFu, LanParkinson, PatrickVora, KaushalJagadish, ChennupatiTan, Hark Hoe2015-12-10December 19781467330459http://hdl.handle.net/1885/60293Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.Keywords: Fill factor; Gaas nanowires; GaAs solar cells; High quality; Semiconductor nanowire; Surface passivation; Total power; Aluminum gallium arsenide; Gallium arsenide; Microelectronics; Nanowires; Open circuit voltage; Semiconducting gallium; Solar cells; Nan201210.1109/COMMAD.2012.64723952016-02-24