Lloyd-Hughes, JCastro-Camus, EFraser, MichaelJagadish, ChennupatiJohnston, Michael BTan, Hark Hoe2015-12-07May 21-261557528136http://hdl.handle.net/1885/21162The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials.Keywords: Civil aviation; Electron optics; Ions; Lasers; Optical pumping; Quantum electronics; Carrier dynamics; Ion damages; Life-times; Lifetime measurements; Optical-; Semi-conductors; Spectral widths; Subpicosecond; Terahertz; Terahertz emissions; Terahertz emi200610.1109/CLEO.2006.46286062016-02-24