Kashizadeh, AfsanehBasnet, RabinBlack, LachlanSamundsett, ChristianSun, ChangJin, QianWang, YichunDeng, HaoMacdonald, Daniel2025-05-232025-05-230927-0248ORCID:/0000-0001-5792-7630/work/184099605ORCID:/0000-0002-0406-6918/work/184101291http://www.scopus.com/inward/record.url?scp=85202882998&partnerID=8YFLogxKhttps://hdl.handle.net/1885/733751103This study reports on the electronic properties of industrial phosphorus-doped n-type silicon ingots for photovoltaic applications grown using the Recharged Czochralski method. The electronic quality is assessed via carrier lifetime measurements, both directly on the ingots and on passivated wafers, and via implied open-circuit (iVOC), and implied maximum power point (iVMPP) voltages. The wafers are studied in the as-grown state, and after various high temperature steps, including Tabula Rasa, phosphorus diffusion gettering, and boron diffusion. The material exhibited very high bulk quality, with bulk lifetimes up to 8ms at an injection level of 5×1014cm−3, and with iVOC (1-sun) values up to 750mV, prior to any high temperature processing. A Tabula Rasa step did not significantly improve the wafer quality, indicating a low presence of oxygen-related defects in this material, consistent with the low interstitial oxygen content of below 5×1017cm−3. However, phosphorus diffusion gettering improved the wafer quality, especially towards the tail end of each ingot, and at lower injection levels near maximum power point. Phosphorus diffusion gettering increased the iVOC (1-sun) of the wafers by around 5mV, approaching the Auger limit. Additionally, a boron diffusion step had minimal impact on the bulk lifetimes. Overall, our findings suggest that these RCz-grown n-type wafers exhibit very high quality, approaching the Auger limit near open-circuit, and are well-suited for high-efficiency solar cells without the need for additional high-temperature processing.Daniel Macdonald reports financial support was provided by Australian Renewable Energy Agency (ARENA). Daniel Macdonald reports financial support was provided by Australian Centre for Advanced Photovoltaics (ACAP). Afsaneh Kashizadeh reports equipment, drugs, or supplies was provided by LONGi Green Energy Technology Co Ltd. Chang Sun reports a relationship with LONGi Green Energy Technology Co Ltd that includes: employment. Qian Jin reports a relationship with LONGi Green Energy Technology Co Ltd that includes: employment. Yichun Wang reports a relationship with LONGi Green Energy Technology Co Ltd that includes: employment. Hao Deng reports a relationship with LONGi Green Energy Technology Co Ltd that includes: employment. If there are other authors, they declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.This work has been supported by the Australian Renewable Energy Agency (ARENA) and the Australian Centre for Advanced Photovoltaics (ACAP). The authors extend their gratitude to Zhongshu Yang from ANU for his valuable discussions.enPublisher Copyright: © 2024Carrier lifetimeGetteringN-type siliconRecharged CzochralskiSilicon solar cells2024-10-1510.1016/j.solmat.2024.11314385202882998