Pyke, DanielElliman, RobertMcCallum, Jeffrey C.2015-12-10December 19781424473335http://hdl.handle.net/1885/51697The effect of intrinsic and applied stress on hydrogen diffusion and trapping are studied by elastic-recoil detection (ERD), Rutherford backscattering and channelling (RBS-C) and transmission electron microscopy (TEM).Keywords: Applied stress; Hydrogen diffusion; Rutherford back-scattering; Strained Silicon; TEM; Hydrogen; Rutherford backscattering spectroscopy; Transmission electron microscopy; Microelectronics201010.1109/COMMAD.2010.56997282016-02-24