Wang, GuoxiangNie, QiuhuaShen, XiangWang, R. P.Wu, LiangcaiFu, JingXu, TiefengDai, Shixun2015-09-212015-09-210003-6951http://hdl.handle.net/1885/15607This work was financially supported by the Program for New Century Excellent Talents in University (Grant No. NCET-10-0976), the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y1090996), the Natural Science Foundation of Ningbo City, China (Grant No. 2011A610092), the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.4742144Keywords: A-center; Crystallization temperature; Data retention; Face centered cubic phase; FCC phase; Hexagonal close-packed; High thermal stability; Phase Change; Phase change films; Zn atoms; Germanium; ZincPhase change behaviors of Zn-doped Ge2Sb2Te5 films2012-08-0110.1063/1.47421442016-02-24