Jacobson, D. C.Elliman, R. G.Gibson, J. M.Olson, G. L.Poate, J. M.Williams, J. S.2026-01-032026-01-0309318374050272-9172ORCID:/0000-0002-1304-4219/work/167651041https://hdl.handle.net/1885/733803386The diffusion of Cu, Ag and Au has been measured in implanted, amorphous Si, over the range 150-600 degree C. The diffusion coefficients are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1. 25, 1. 6 and 1. 4 eV respectively. The solubility of Au in amorphous Si was measured to be 6 orders of magnitude greater than crystalline Si at a temperature of 515 degree C. The Cu, Ag and Au are segregated ahead of the moving amorphous-crystalline interface. The presence of Au can increase the velocity of the interface.6en19870023569958