Hudson, DarrenSingh, NeeteshYu, YiGrillet, CJackson, Stuart DCasas-Bedoya, AlvaroRead, AndrewAtanackovic, Peter BDuvall, Steven GPalombo, StefanoMoss, D JLuther-Davies, BarryMadden, SteveEggleton, Benjamin J2015-12-102015-12-10July 27-319781557528209http://hdl.handle.net/1885/57463We generate a 1.9-4.9 μm supercontinuum in dispersion engineered silicon waveguides with a sapphire substrate. The sapphire substrate allows for extension of the long wavelength edge into the mid-IR by ~1000 nm over silicon-on-silica waveguides.Octave spanning mid-IR supercontinuum generation in a silicon-on-sapphire waveguide20142015-12-09