Paladugu, MohanchandZou, JinGuo, Ya-NanZhang, XinJoyce, Hannah J.Gao, QiangTan, Hark HoeJagadish, C.Kim, Yong2015-10-212015-10-210003-6951http://hdl.handle.net/1885/15998The structural and morphological characteristics of InAs/GaAs radial nanowireheterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the {112}A sidewalls of GaAsnanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowireheterostructures. Such formation of radial nanowireheterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures.3 pageshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/10/15). Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3033551Keywords: Crystals; Electric wire; Heterojunctions; Indium arsenide; Microscopic examination; Nanostructured materials; Nanowires; Semiconductor growth; Hierarchical Nanostructures; InAs/GaAs; Morphological characteristics; Nanowire heterostructures; Potential appl2008-11-2010.1063/1.30335512016-02-24