Liu, XinjunBiju, Kuyyadi P.Lee, JoonmyoungPark, JubongKim, SeonghyunPark, SangsuShin, JunghoSadaf, Sharif Md.Hwang, Hyunsang2015-12-100003-6951http://hdl.handle.net/1885/65556The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett-Packard group. The effects of key parameters on electrical properties are elucidated. The current-voltage features of bipolar and filamentary resistive switching are reproduced by using a parallel MF model with dynamic growth and rupture of multiple MFs. This model can be extended and adapted to most nanosized transition metal oxide memristors.Keywords: Current voltage; Dynamic growth; Hewlett-packard; Key parameters; Nano-sized; Resistive switching; Transition-metal oxides; Memristors; Passive filters; Resistors; Switching systems; Transition metal compounds; Transition metals; Electric properties201110.1063/1.36384862016-02-24