Thelander, ClaesCaroff, PhilippePlissard, SébastienDick, Kimberly A.2015-09-252015-09-250003-6951http://hdl.handle.net/1885/15697Results of electrical characterization of Au nucleated InAs₁ˍₓSbₓnanowiresgrown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAsnanowires is observed for a Sb content of x = 0.13. Pure InSbnanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs₁ˍₓSbₓ shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires.This work received financial support from the Nanometer Structure Consortium at Lund University (nmC@LU), the Swedish Research Council (VR), the Swedish Foundation for Strategic Research (SSF), and the Knut and Alice Wallenberg Foundation (KAW). It also received financial support from the French National Research Agency (ANR), TERADOT project, under Contract No.ANR-11-JS04-002-01.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 24/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Thelander, Claes, et al. "Electrical properties of InAs1− xSbx and InSb nanowires grown by molecular beam epitaxy." Applied Physics Letters 100.23 (2012): 232105.) and may be found at https://doi.org/10.1063/1.4726037Keywords: Crystal phase; Diameter dependent; Electrical characterization; Field-effect mobilities; InAs; InSb nanowire; Mobility value; Positive shift; Wurtzites; Epitaxial growth; Indium antimonides; Indium arsenide; Molecular beam epitaxy; Nanowires; Zinc sulfide2012-06-0610.1063/1.47260372016-02-24