Yi, Z. G.Li, Y. X.Zeng, J. T.Yang, Q. B.Wang, D.Lu, Y. Q.Yin, Q. R.2015-11-262015-11-260003-6951http://hdl.handle.net/1885/16825Bi₅ˍₓLaₓTiNbWO₁₅ (x=0–1.50)ceramics prepared by conventional solid-state reaction were studied using x-ray diffraction(XRD),dielectric spectroscopy and Raman scattering techniques. The XRD analysis implied that single-phase intergrowth bismuth layered perovskite structure was obtained for all the samples and when x=0.75, the Bi³⁺ in (Bi₂O₂)²⁺ layer begins to be substituted by La³⁺. The dielectric spectra showed that, when Bi³⁺ in (Bi₂O₂)²⁺ is substituted, the Curie temperature becomes diffusive and the dielectricpermittivity at room temperature is increased in a wide frequency range. Especially when x=1.50, the dielectricpermittivity reaches its maximum of 270, nearly two times larger than that of the La3+ undoped sample. The Raman scattering experiments evidenced further that Bi³⁺ in (Bi₂O₂)²⁺ is substituted when x⩾0.75 and revealed the orthorhombic distortion of the octahedra is responsible for the increase of the dielectricpermittivity at x⩾1.25.This work was supported by the Ministry of Science and Technology of China through 973-Project under Grant No. 2002CB613307.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 26/11/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2132077Lanthanum distribution and dielectric properties of intergrowth Bi₅ˍₓLaₓTiNbWO₁₅ ferroelectrics2005-11-0810.1063/1.2132077