Deenapanray, P. N. K.Martin, A.Doshi, S.Jagadish, C.Tan, Hark Hoe2015-10-162015-10-160003-6951http://hdl.handle.net/1885/15950We have used capacitance–voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925 °C. Two electrically active defects HA (EV+0.39 eV) and HB2 (EV+0.54 eV), which we have attributed to Cu- and Asi/AsGa-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of galliumvacancies causes segregation of Zndopant atoms and Cu towards the surface of IFD samples. The atomic relocation process is critically assessed in terms of the application of IFD to the band gap engineering of doped GaAs-based heterostructures.Two of the authors ~P.N.K.D. and H.H.T.! acknowledge the financial support of the Australian Research Councilhttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 16/10/15). Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1519728Keywords: Atomic relocation; Band gap engineering; Capacitance voltage; Dopant atoms; Doping concentration; Electrically active defects; P-type GaAs; Atoms; Deep level transient spectroscopy; Doping (additives); Gallium arsenide; Impurities; Power quality; Semicond2002-11-0410.1063/1.15197282016-02-24