Nguyen, Hieu TBaker-Finch, SimeonMacdonald, Daniel2015-09-142015-09-140003-6951http://hdl.handle.net/1885/15370The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90–363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data from Trupke et al. [J. Appl. Phys. 94, 4930 (2003).] We present a polynomial parameterization describing the temperature dependence of the product of B(T) and the square of the intrinsic carrier density. We also find that B(T) saturates at a near constant value at room temperature and above for silicon samples with relatively low free carrier densities.4 pages© 2014 AIP Publishing LLC. http://www.sherpa.ac.uk/romeo/issn/0003-6951/..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/09/15).2014-03-1910.1063/1.4869295