Zhang, XutaoLi, ZiyuanYao, XiaomeiHuang, HaiWei, DongdongZhou, ChenTang, ZhouYuan, XiaomingChen, Ping PingHu, WeidaZou, JinLu, WeiFu, Lan2020-11-09ACS Appl. Electron. Mater. 2019, 1, 9, 1825–18312637-6113http://hdl.handle.net/1885/214147Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.This work was supported by the National Natural Science Foundation of China (11634009 and 11774016), the Shanghai Science and Technology Foundation (18JC1420401), the National Key R&D Program of China (2016YFB0402401 and 2016YFB0402404), Royal Society-Neton Advanced Fellowship (Na170214) and the Australian Research Council.application/pdfen-AU© 2019 American Chemical SocietyInAs nanowiresMBEfield-effect transistorsurface trapping statesrewritable nonvolatile memory2019-08-1310.1021/acsaelm.9b003682020-07-06