Desnica-Frankovic, I DDubcek, PDesnica, U VBernstorff, SRidgway, Mark CGlover, Christopher2015-12-130168-583Xhttp://hdl.handle.net/1885/72438Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74Ge, from 3 × 1012 cm-2 to 3 × 1016 cm-2; at room- or liquid nitrogen-tempKeywords: Amorphization; Amorphous materials; Ion implantation; Microstructure; Porosity; X ray scattering; Amorphous Ge; End-of-range region; GISAXS; Ion doses; Nano-voids; Germanium Amorphous Ge; GISAXS; Ion implantation; Nano-voids; Porosity200610.1016/j.nimb.2006.03.0932015-12-11