Haberl, BiancaBogle, S. N.Li, T.McKerracher, I.Ruffell, S.Munroe, P.Williams, J. S.Abelson, J. R.Bradby, J. E.2015-11-122015-11-120021-8979http://hdl.handle.net/1885/16485We investigate the structure of magnetron-sputtered (MS) amorphous silicon(a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant differences are observed in short- and medium-range order following thermal annealing. Whereas II a-Si undergoes structural relaxation toward a continuous random network, MS a-Si exhibits little change. Cross-sectional transmission electron microscopy reveals the presence of nanopores in the MS film consistent with reduced mass-density. Therefore, the short- and medium-range order of annealed, MS a-Si is tentatively attributed to these pores.http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/11/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3658628Keywords: Amorphous silicon (a-Si); Annealed state; Continuous random networks; Cross sectional transmission electron microscopy; Deposition conditions; Medium range order; Thermal-annealing; Annealing; Crystal atomic structure; Film preparation; Magnetrons; Silico2011-11-0710.1063/1.36586282016-02-24