de Azevedo, GustavoRidgway, Mark CBetlehem, JYu, Kin ManGlover, C JForan, Garry J2015-12-132015-12-130168-583Xhttp://hdl.handle.net/1885/86537The metal-decorated nanocavities in Si were discussed using EXAFS measurements. A sample preparation methodology to enable the identification with synchrotron radiation-based analytical techniques, of the gettering sites of metallic impurities on the internal walls of implantation-induced nanocavities in Si substrates was elaborated. The preliminary results for the Cu-Si and Cu-Cu bond lengths on the internal surface of the nanocavities were also presented.Keywords: Chemical bonds; Copper compounds; Crystal impurities; Nanostructured materials; Synchrotron radiation; X ray analysis; Nanocavities; Silicon Cavities; EXAFS; Gettering; Silicon; Voids200310.1016/S0168-583X(02)01430-12015-12-12