Biju, Kuyyadi P.Liu, XinjunBourim, El MostafaKim, InsungJung, SeungjaePark, JubongHwang, Hyunsang2015-12-101099-0062http://hdl.handle.net/1885/65599Resistive switching characteristics of low temperature sol-gel processed (250°C) Ti O2 thin films are investigated. The Pt/TiO 2/Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability aKeywords: Bottom electrodes; Compliance current; Cycling endurance; High-resistance state; Low temperatures; Low-resistance state; On/off ratio; Oxygen vacancy defects; Physical model; Reliability and stability; Resistive switching; Set operation; Switching propert201010.1149/1.34944332016-02-24