Nandi, SanjoyLiu, XinjunVenkatachalam, DineshElliman, Robert2015-12-130022-3727http://hdl.handle.net/1885/70857The threshold current for inducing the metal-insulator transition in a NbO<inf>2-x</inf> selector element is shown to be affected by the properties of an adjacent memory element when integrated into a hybrid selector-memory device structure. ExperimentalThreshold current reduction for the metal-insulator transition in NbO<inf>2-x</inf>-selector devices: The effect of ReRAM integration201510.1088/0022-3727/48/19/1951052015-12-11