Dowd, ASamoc, MarekLuther-Davies, BarryElliman, Robert2015-12-130168-583Xhttp://hdl.handle.net/1885/93679Degenerate four-wave mixing (DFWM) is used to examine the nonlinear optical response of Ge nanocrystals in a silica matrix. The nanocrystals are formed by implanting 1.0 MeV Ge ions into silica to a dose of 3.0×1017 Ge cm-2 and annealing at 1100°C. TheKeywords: Degenerate four-wave mixing (DFWM); Quantum confinement; Semiconducting nanocrystals; Annealing; Four wave mixing; Fused silica; Ion implantation; Particle size analysis; Semiconducting germanium; Nanostructured materials Four-wave mixing; Ion-implantation; Nanocrystals; Nonlinear optics; Quantum confinementNonlinear Optical Properties of Semiconducting Nanocrystal in Fused Silica19992015-12-12