Oliver, DavidBradby, JodieWilliams, JamesSwain, Michael VincentMunroe, Paul2015-12-082015-12-080957-4484http://hdl.handle.net/1885/35833We investigate the mechanical response of 50-600 nm epitaxial Ge films on a Si substrate using nanoindentation with a nominally spherical (R≈4.3 νm) diamond tip. The inelastic deformation mechanism is found to depend critically on the film thickness. SKeywords: Diamonds; Epitaxial films; Film thickness; Germanium; Magnetic films; Molecular beam epitaxy; Nanoindentation; Semiconducting silicon compounds; Stresses; Thin films; Diamond tips; Elastic stresses; Fracture responses; Ge films; Indenter; Induced dislocat200810.1088/0957-4484/19/47/4757092016-02-24