Lysevych, MykhayloKarouta, FouadJagadish, ChennupatiTan, Hark Hoe2015-12-100013-4651http://hdl.handle.net/1885/66502Single-step C H4 / H2 -based reactive ion etching (RIE) process, without alternating O2 plasma treatment, has been developed with virtually no polymer buildup on the etched surface. InP ridge waveguides up to 1.9 μm high were etched without any mid- or pKeywords: Etched surface; Fabrication process; InP; Low loss; Plasma treatment; Ridge waveguides; Root mean square roughness; Single-step; Waveguide propagation; Electric losses; Plasma applications; Waveguides; Reactive ion etching201110.1149/1.35327672016-02-24