Ratcliff, ThomasFong, KeanShalav, AviElliman, RobertBlakers, Andrew2015-12-101862-6254http://hdl.handle.net/1885/61699The selection of either an oxidising or inert ambient during high temperature annealing is shown to affect dopant activation and electron-hole recombination in boron implanted silicon samples. Samples implanted with B at fluence between 3 × 1014 cm-2 to201410.1002/pssr.2014092952015-12-10