Elliman, R. G.2026-01-032026-01-030142-2448ORCID:/0000-0002-1304-4219/work/167651101https://hdl.handle.net/1885/733803363A new impurity redistribution mechanism is reported for low temperature annealing (525 degree C) of (100) Si samples implanted with high indium doses. The redistribution is a strong function of implant dose and is believed to be stress related.7en19810019755186