Macdonald, D.Mäckel, H.Cuevas, A.2015-12-012015-12-010003-6951http://hdl.handle.net/1885/16944Crystalline silicon wafers, intentionally precontaminated with iron, were diffused with phosphorus and boron, and the recombination properties of the bulk and diffused regions extracted from injection-dependent carrier lifetime measurements. While the phosphorus diffusions were found to getter more than 99% of the iron from the bulk, the borondiffusions only extracted 65% in the best case. The presence of this gettered iron caused significant additional recombination in the boron diffused layers, while it had no measurable impact on the phosphorus diffused regions. This may be a consequence of the small capture cross section for holes of interstitialiron.This work has been supported by the Australian Research Council.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 1/12/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2181199Keywords: Boron; Diffusion; Iron; Phosphorus; Silicon; WSI circuits; Gettered iron; Interstitial iron; Recombination in diffused regions; Crystalline materials2006-02-2810.1063/1.21811992015-12-08