Hu, WanbiaoLiu, YunWithers, RaymondFrankcombe, TerryNoren, LasseSnashall, AmandaKitchin, MelanieSmith, PaulGong, BillChen, HuaSchiemer, JasonBrink, FrankWong-Leung, Jennifer2015-12-101476-1122http://hdl.handle.net/1885/62289The immense potential of colossal permittivity (CP) materials for use in modern microelectronics as well as for high-energy-density storage applications has propelled much recent research and development. Despite the discovery of several new classes of CPKeywords: Broad temperature ranges; Colossal permittivity; Defect engineering; High energy densities; Localized electrons; Low dielectric loss; Modern microelectronics; Systematic defect analysis; Dielectric losses; Materials; Microelectronics; Niobium compounds; O201310.1038/nmat36912016-02-24