Mokkapati, S.Lever, P.Jagadish, C.McBean, K. E.Phillips, M. R.Tan, Hark Hoe2015-09-292015-09-290003-6951http://hdl.handle.net/1885/15730Selective growth of InGaAsquantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots.Atomic force microscopy and cathodoluminescence are used for characterization of the selectively growndots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAsquantum well and InGaAsquantum dots on the same wafer is demonstrated. By using a single-step growth,dots luminescing at different wavelengths, in the range 1150–1230nm, in different parts of the same wafer are achieved.The Australian Research Council is gratefully acknowledged for the financial support.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 29/09/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Mokkapati, S., et al. "Controlling the properties of InGaAs quantum dots by selective-area epitaxy." Applied Physics Letters 86.11 (2005): 113102.) and may be found at https://doi.org/10.1063/1.1875745Keywords: Atomic force microscopy; Band structure; Cathodoluminescence; Epitaxial growth; Integrated circuits; Masks; Semiconducting indium gallium arsenide; Semiconductor quantum wells; Substrates; Bandgap energy control; Mask dimensions; Photonic integrated circu2005-03-0810.1063/1.18757452015-12-11