Tan, J.Macdonald, D.Bennett, N.Kong, D.Cuevas, A.Romijn, I.2015-12-012015-12-010003-6951http://hdl.handle.net/1885/16956The degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems to contribute to the reduced carrier lifetimes observed.The authors would like to acknowledge the Australian Research Council for funding this work.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 2/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2766664Keywords: Annealing; Carrier lifetime; Crystalline materials; Light emitting diodes; Silicon; Metal precipitates; Multicrystalline silicon; Phosphorus emitters; Precipitates2007-07-2410.1063/1.27666642015-12-09