Rougieux, Fiacre ESun, RyanZhu, YanMacdonald, Daniel2022-11-28June 10-159781538685297http://hdl.handle.net/1885/280446A key strategy for further reducing the cost of solar electricity is through the development of very-high efficiency silicon solar cells (>27%). The challenge in achieving this goal lies in overcoming limitations imposed by the electronic quality of the silicon wafers themselves. To overcome this challenge, there is an urgent need for a refined understanding of defects limiting the electronic quality of silicon wafers. This paper provides a nuanced and detailed picture what constitutes accurate recombination parameters for defects in silicon. It outlines three widespread issues in existing measurements of recombination parameters. It enables robust simulation of the lifetime in silicon for solar cell applications.This work has been supported by the Australian Research Council (ARC) Discovery Early Career Researcher Fellowship program.application/pdfen-AU© 2018 IEEERecombinationmultivalentdefectflawsDeep Level Transient SpectroscopyTemperature and Injection Dependent Lifetime SpectroscopyAccurate defect recombination parameters: What are the limitations of current analyses?201810.1109/PVSC.2018.85475852021-11-28