Jolley, GregFu, LanJagadish, ChennupatiVukmirovic, NHarrison, PTan, Hark Hoe2015-12-07July 3-7 21424404533http://hdl.handle.net/1885/26361The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×109cmHz1/2/W has been achieved at a temperature of 77K. In an effort to undKeywords: Chemical vapor deposition; Infrared detectors; Nanotechnology; Optoelectronic devices; Photodetectors; Quantum electronics; Semiconductor quantum dots; Dots in a well (DWELL); Infrared photo detectors; InGaAs/GaAs; International conferences; Nanoscience a Metal-organic chemical vapor deposition; Quantum dot in frared photodetectorQuantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD200610.1109/ICONN.2006.3406422015-12-07