Ruault, M-ORidgway, Mark CFortuna, Frank NicholasBernas, HarryWilliams, James2015-12-132015-12-131286-0042http://hdl.handle.net/1885/86903We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperaturesKeywords: Crystalline materials; Irradiation; Shrinkage; Temperature; Transmission electron microscopy; Ion beam irradiation; Ion radiation effects; Irradiation-induced atomic displacement rate; Irradiation-induced nanocavity shrinkage; Amorphous silicon20032015-12-12