Jin, H.Jellett, W. E.Chun, Z.Weber, K. J.Smith, P. J.Blakers, Andrew2015-12-212015-12-2126/03/20080003-6951http://hdl.handle.net/1885/95124A combination of electron paramagnetic resonance(EPR) and minority carrier lifetime measurements is used to unambiguously demonstrate that the presence of a B diffusion layer at the surface of oxidized Si (111) wafers causes a significant increase in the interface defect density as well as interface recombination, compared to undiffused surfaces.EPRmeasurements show a nearly three-fold increase in the Pb center density, while the lifetime measurements indicate an increase in surface recombination activity by a factor of more than two, for B diffused samples with a sheet resistance of ∼250Ω∕□□.application/pdfen-AUhttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/12/15). Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2903698Keywords: Diffusion; Paramagnetic resonance; Sheet resistance; Silicon compounds; Boron diffusions; Silicon silicon oxide interface; Boron10.1063/1.29036982016-02-24