Charnvanichborikarn, SupakitConway, MartinWong-Leung, JenniferWilliams, James2015-12-070957-4484http://hdl.handle.net/1885/17936We propose a new method of confining Au nanoparticles of a narrow size distribution at a precise depth in an SiO2 matrix. The process involves the formation of nanocavities in silicon by hydrogen implantation and annealing (at 850 °C), followed by Au getKeywords: Au nanoparticles; Au particles; Average diameters; Before and after; Buried oxide layers; Gettering; Hydrogen implantations; matrixes; Nano-cavities; Narrow size distributions; Silicon-on-insulator wafers; Wet oxidations; Hydrogen; Oxidation; SemiconductiAchieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates200910.1088/0957-4484/20/18/1856032016-02-24