Presenti, G CBoudinov, HCarmody, CJagadish, Chennupati2015-12-132015-12-130168-583Xhttp://hdl.handle.net/1885/77932Fe doped semi-insulating and p-type InP were implanted with P+ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal anKeywords: Charge carriers; Electrons; Fermi level; Hall effect; Ion implantation; Photodetectors; Rapid thermal annealing; Semiconducting indium phosphide; Defect energy levels; Negative free carriers; Photocarriers; Ion bombardment Hall effect; InP; Ion bombardment; Mobility; Variable temperature200410.1016/j.nimb.2003.12.0622015-12-11