Deenapanray, PrakashNyamhere, CloudAuret, Francois DFarlow, F C2015-12-070921-4526http://hdl.handle.net/1885/17717We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.Keywords: Annealing; Crystal growth from melt; Epitaxial growth; Gallium; Reaction kinetics; Czochralski Si; Gallium doping; Laplace DLTS; Point defects Czochralski Si; Defects; Gallium doping; Laplace DLTS200610.1016/j.physb.2005.12.0432015-12-07