Li, Tsu-Tsung (Andrew)Cuevas, AndresTan, JasonSamundsett, ChristianSaynova, D.Geerligs, B.2015-12-10December 19781424473335http://hdl.handle.net/1885/63054We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO2 interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88-210 Ω/□, are already consistent with solar cell with efficiencies in the 20% range.Keywords: Boron-doped silicon; Interfacial layer; Recombination currents; Rf-sputtering; Surface passivation; Boron; Electric resistance; Microelectronics; Silicon nitride; Silicon oxides; Passivation201010.1109/COMMAD.2010.56996942016-02-24