Leech, P WRidgway, Mark C2015-12-130168-583Xhttp://hdl.handle.net/1885/93697The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by approximately 50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.Keywords: Fluorocarbons; Ion implantation; Oxygen; Plasma etching; Reactive ion etching; Lithium tantalate; Lithium compounds199910.1016/S0168-583X(99)00578-92015-12-12